Nadia Binggeli

   

 

  

         

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LIST OF PUBLICATIONS (updated: September 2015)
  1. N. Binggeli and A. Baldereschi, ``Prediction of Line Intensities and Interpretation of Acceptor Spectra in Semiconductors'', Solid State Commun. 66, 323-328 (1988).
  2. N. Binggeli, A. Baldereschi and A. Quattropani, ``One and Two-Photon Acceptor Spectra in Semiconductors'', in Shallow Impurities in Semiconductors, Inst. Phys. Conf. Ser. 95, 521-526 (1989).
  3. A. Quattropani and N. Binggeli, ''Two-Photon Transitions Between Discrete States'', in The Hydrogen Atom, F. Bassani, M. Inguscio and T.W. Hänsch, eds., Springer Verlag, Berlin, 1989, pp. 61-67.
  4. A. Baldereschi and N. Binggeli, ``Two-Particle Coulomb Systems in a Magnetic Field'', in Progress in Electron Properties of Solid, E. Doni, R. Girlanda, G. Pastori Parravicini and A. Quattropani, eds., Kluwer, Dordrecht, 1989, pp. 197-209.
  5. N. Binggeli and A. Baldereschi, ``Determination of the Hole Effective Masses in GaAs from Acceptor Spectra'', Phys. Rev. B 43, 14734-14737 (1991).
  6. N. Binggeli, N. Troullier, J. L. Martins, and J. R. Chelikowsky, ``Electronic properties of a-quartz under pressure'', Phys. Rev. B 44, 4771-4777 (1991).
  7. N. Binggeli, and J. R. Chelikowsky, ``Structural transformation of quartz at high pressures'', Nature 353, 344-346 (1991).
  8. A. Pasquarello, L. C. Andreani, N. Binggeli and A. Quattropani, ``Effective-state approach to second-order perturbation theory'', Europhys. Lett. 17, 387-392 (1992).
  9. N. Binggeli, J. L. Martins and J. R. Chelikowsky, ``Simulation of Si clusters via Langevin molecular dynamics with quantum forces'', Phys. Rev. Lett. 68, 2956-2959 (1992).
  10. N. Binggeli and A. Baldereschi, ``Analysis of acceptor chemical shifts in Ge'', Phys. Rev. B 45, 5944-5952 (1992).
  11. N. Binggeli and J. R. Chelikowsky, ``Elastic instability in a-quartz under pressure'', Phys. Rev. Lett. 69, 2220-2223 (1992).
  12. J. R. Chelikowsky, N. Binggeli and N. Keskar, ``First principles methods for structural trends in oxides: applications to crystalline silica'', J. of Alloys and Compounds 197, 137-144 (1993).
  13. J. R. Chelikowsky, N. Binggeli and K. M. Glassford, ``Simulation of Silicon Clusters from `Quantum' Langevin Molecular Dynamics'', Zeitschrift für Physik D 26, 51-55 (1993).
  14. J. R. Chelikowsky and N. Binggeli, ``Elastic instabilities and Amorphization of Crystalline Silica Under Pressure'', MRS Symp. Proc. 291, 629-639 (1993).
  15. J. R. Chelikowsky and N. Binggeli, ``First-principles simulation of liquid silicon'', Solid State Commun. 88, 381-385 (1993).
  16. N. Binggeli and J. R. Chelikowsky, Reply to a comment on ``Elastic instability in a-quartz under pressure'', Phys. Rev. Lett. 71, 2675 (1993).
  17. N. Binggeli, and J. R. Chelikowsky, ``Is simulated `amorphous' silica really amorphous?'', in High Pressure Science and Technology, S.C. Schmidt, J. W. Shaner and M. Ross, Eds., American Insitute of Physics, Woodbury, New York, 1994, pp. 397-400.
  18. J. R. Chelikowsky and N. Binggeli, ``Doing Materials Science with a Supercomputer: On the Road to 1000 Atom Systems'', Comp. Mat. Sci. 2, 111-126 (1994).
  19. J. R. Chelikowsky, N. Troullier, and N. Binggeli, ``First-principles simulation of liquid silicon using Langevin dynamics with quantum interatomic forces'', Phys. Rev. B 49, 114-119 (1994).
  20. N. Binggeli, N. K. Keskar, and J. R. Chelikowsky, ``Pressure-induced amorphization, elastic instability and soft modes in a-quartz'', Phys. Rev. B 49, 3075-3081 (1994).
  21. N. Binggeli, J. R. Chelikowsky, and R. M. Wentzcovitch, ``Simulating the amorphization of a-quartz under pressure'', Phys. Rev. B 49, 9336-9340 (1994).
  22. F. Kirchhoff, N. Binggeli, G. Galli, and S. Massidda, ``Structural and bonding properties of solid tellurium from first-principles calculations'', Phys. Rev. B 50, 9063-9071 (1994).
  23. N. Binggeli and J. R. Chelikowsky, ``Langevin molecular dynamics with quantum forces: application to silicon clusters'', Phys. Rev. B 50, 11764-11770 (1994).
  24. X. Jing, N. Troullier, D. Dean, N. Binggeli, J. R. Chelikowsky, K. Wu, and Y. Saad, ``Ab Initio Molecular Dynamics Simulations of Si Clusters Using the Higher-Order Finite-Difference-Pseudopotential Method'', Phys. Rev. B 50, 12234-12237 (1994).
  25. J. R. Chelikowsky, N. Troullier, X. Jing, D. Dean, N. Binggeli, K. Wu and Y. Saad, ``Algorithms for predicting the structural properties of clusters'', Comput. Phys. Commun. 85, 325-335 (1995).
  26. N. Binggeli and J. R. Chelikowsky, ``Photoemission spectra and structures of Si clusters at finite temperature'', Phys. Rev. Lett. 75, 493-496 (1995).
  27. T. Sengstag, N. Binggeli, and A. Baldereschi, ``Anomalies in the pressure dependence of the effective charge in cubic semiconductors'', Phys. Rev. B 52, R8613-R8616 (1995).
  28. J. R. Chelikowsky, N. Keskar, and N. Binggeli, ``The structural properties of silica using classical and quantum interatomic forces'', Molecular Engineering 6, 1-37 (1996).
  29. C. Berthod, N. Binggeli, and A. Baldereschi, ``Local interface dipoles and the tuning of the Al/GaAs(100) Schottky barrier height with ultrathin Si interlayers'', Europhys. Lett. 36, 67-72 (1996).
  30. J. Bardi, N. Binggeli, and A. Baldereschi, ``Pressure and alloy-composition dependence of Al/Ga1-xAlxAs Schottky barriers'', Phys. Rev. B 54, R11102-R11105 (1996).
  31. N. Binggeli and J. R. Chelikowsky, ``Ab initio pseudopotential methods for oxides: application to a-quartz near the amorphous transition'', in Quantum Theory of Real Materials, J. R. Chelikowsky and S. G. Louie, eds., Kluwer, Boston, 1996, pp. 387-410.
  32. C. Berthod, J. Bardi, N. Binggeli, and A. Baldereschi, ``Schottky barrier tuning at Al/GaAs (100) junctions'', J. Vac. Sci. Technol. B 14, 3000-3007 (1996).
  33. J. R. Chelikowsky and N. Binggeli, ``Atomic and electronic structure of silicon clusters at finite temperature'', in Cluster-assembled materials, Materials Science Fortum, Volume 232, ed., K. Sattler, TransTech Publications, Switzerland, 1996, pp. 87-102.
  34. J. Bardi, C. Berthod, N. Binggeli, and A. Baldereschi, ``Schottky barrier engineering at Al/Ga1-xAlxAs junctions'', Proc. XXIII Int. Conf. Phys. Semicond., M. Scheffler and R. Zimmermann, eds., World Scientific, Singapore, 1996, pp. 1003-1006.
  35. J. R. Chelikowsky, N. Keskar, and N. Binggeli, ``The structural properties of silica using classical and quantum interatomic forces'', in Modelling Minerals and Silicated Materials, B. Silvi and P. D'Arco, eds., Kluwer Academic Press, 1997, pp. 1-37.
  36. P. Ferrara, N. Binggeli, and A. Baldereschi, ``Band discontinuities in zincblende and wurtzite AlN/SiC heterostructures'', Phys. Rev. B 55, R7418-R7421 (1997).
  37. M. Peressi, N. Binggeli and A. Baldereschi, ``Band engineering at interfaces: theory and numerical experiments'', J. Phys. D 31, 1273-1299 (1998).
  38. R. M. Wentzcovitch, C. da Silva, J. R. Chelikowsky, and N. Binggeli, ``A new phase and pressure induced amorphization in silica", Phys. Rev. Lett. 80, 2149-2152 (1998).
  39. M. Lazzarino, G. Scarel, S. Rubini, G. Bratina, L. Sorba, A. Franciosi, C. Berthod, N. Binggeli, and A. Baldereschi, ``Al/ZnSe(001) Schottky barrier height versus initial ZnSe surface reconstruction'', Phys. Rev. B 57, R9431-9434 (1998).
  40. J. R. Chelikowsky, R. M. Wentzcovitch, C. Da Silva, and N. Binggeli, ``A new pressure induced phase in silica'', MRS Symp. Proc. 499, 243-252 (1998).
  41. C. Berthod, N. Binggeli, and A. Baldereschi, ``Formation energy, lattice relaxation, and electronic structure of Al/Si/GaAs(100) junctions'', Phys. Rev. B 57, 9757-9762 (1998).
  42. N. Binggeli, P. Ferrara, and A. Baldereschi, ``Band offsets in GaN/AlN and AlN/SiC heterojunctions'', MRS Symp. Proc. 482, 911-916 (1998).
  43. J. R. Chelikowsky and N. Binggeli, ``Modeling the properties of quartz with clusters'', Solid State Commun. 107, 527-531 (1998).
  44. C. J. Fall, N. Binggeli, and A. Baldereschi, ``Anomaly in the anisotropy of the aluminum work function'', Phys. Rev. B 58, R7544-7547 (1998).
  45. J. Bardi, N. Binggeli, and A. Baldereschi, ``Structural and compositional dependences of the Schottky barrier in Al/Ga1-xAlxAs (100) and (110) junctions'', Phys. Rev. B 59, 8054-8064 (1999).
  46. C. J. Fall, N. Binggeli, and A. Baldereschi, ``Deriving accurate work functions from thin-slab calculations'', J. Phys.: Condens. Matter 11, 2689-2696 (1999).
  47. J. R. Chelikowsky and N. Binggeli, ``The electronic and structural properties of silica using ab initio pseudopotentials'', in Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide, R. Devine, J. P. Duraud, and E. Dooryhee, eds., Wiley, Chichester, 2000, pp. 181-197.
  48. D. W. Dean, R. M. Wentzcovitch, J. R. Chelikowsky, and N. Binggeli, ``Pressure-induced amorphization in crystalline silica: soft phonon modes and shear instabilities in coesite'', Phys. Rev. B 61, 3303-3309 (2000).
  49. J. Bardi, N. Binggeli, and A. Baldereschi, ``Existence of localized interface states in metal/GaAs(100) junctions: Au versus Al contacts'', Phys. Rev. B 61, 5416-5422 (2000).
  50. C. J. Fall, N. Binggeli, and A. Baldereschi, ``Work function anisotropy in noble metals: Contributions from d-states and effects of the surface atomic structure'', Phys. Rev. B 61, 8489-8495 (2000).
  51. C. Berthod, N. Binggeli, and A. Baldereschi, ``Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs'', J. Vac. Sci. Technol. B 18, 2114-2118 (2000).
  52. J. R. Chelikowsky, D. J. Chadi, and N. Binggeli, ``Oxygen configurations in silica: implications for diffusion'', Phys. Rev. B 62, R2251-2254 (2000).
  53. M. Di Ventra, C. Berthod, and N. Binggeli, ``Koster-Slater model for the interface-state problem'', Phys. Rev. B 62, R10622-10625 (2000).
  54. S. Rubini, E. Pelucchi, M. Lazzarino, D. Kumar, A. Franciosi, C. Berthod, N. Binggeli, and A. Baldereschi, ``Ideal unreactive metal/semiconductor interfaces: the case of Zn/ZnSe (001)'', Phys. Rev. B 63, 235307-1/8 (2001).
  55. N. Binggeli, P. Ferrara, and A. Baldereschi, ``Structural and chemical trends of the band offsets in nitride heterojunctions'', Phys. Rev. B 63, 245306-1/13 (2001).
  56. C. Sgiarovello, N. Binggeli, and A. Baldereschi, ``Influence of surface morphology on the Si(100) and (111) ionization potentials'', Phys. Rev. B 64, 195305-1/7 (2001).
  57. C. J. Fall, N. Binggeli, and A. Baldereschi, ``Theoretical maps of work function anisotropies'', Phys. Rev. B 65, 45401-1/6 (2002).
  58. C. J. Fall, N. Binggeli, and A. Baldereschi, ``Work functions at facet edges'', Phys. Rev. Lett. 88, 156802-1/4 (2002).
  59. C. J. Fall, N. Binggeli, and A. Baldereschi, ``Work functions and surface charges at metallic facet edges'', Phys. Rev. B 66, 075405-1/10 (2002).
  60. T. Maxisch, N. Binggeli, and A. Baldereschi, ``Intermetallic bonds and midgap interface states at epitaxial Al/GaAs (001) junctions'', Phys. Rev. B 67, 125315-1/6 (2003)
  61. C. Berthod, N. Binggeli, and A. Baldereschi, ``Schottky barrier heights at polar metal/semiconductor interfaces'', Phys. Rev. B 68, 085383-1/11 (2003).
  62. T. Maxisch, A. Baldereschi, and N. Binggeli, ``Midgap interface states at epitaxial Al/AlAs(001) heterojunctions'', Solid State Commun. 126, 265-268 (2003).
  63. C. Sgiarovello, N. Binggeli, and A. Baldereschi, ``Surface morphology and ionization potentials of polar semiconductors: the case of GaAs'', Phys. Rev. B 69, 035320-1/8 (2004).
  64. N. Binggeli and M. Altarelli, ``Orbital ordering, Jahn-Teller distortion, and resonant x-ray scattering in KCuF3'' Phys. Rev. B 70, 85117-1/10 (2004).
  65. N. Binggeli and M. Altarelli, ``Strain effects and anomalous x-ray scattering in tetragonal manganites'', New J. Phys. 6, 165-1/8 (2004).
  66. G. Trimarchi and N. Binggeli, ``Structural and electronic properties of LaMnO3 under pressure: an ab initio LDA + U study'', Phys. Rev. B 71, 35101-1/9 (2005).
  67. M. Di Ventra, C. Berthod, and N. Binggeli, ``Heterovalent interlayers and interface states: an ab initio study of GaAs/Si/GaAs (110) and (100) heterostructures'', Phys. Rev. B 71, 155324-1/15 (2005).
  68. G. Trimarchi and N. Binggeli, ``One-dimensional Fe surface states confined by self-assembled carbon chains at the Fe(001) surface'', Phys. Rev. B 72, 81408(R)-1/4 (2005).
  69. N. Stojic, N. Binggeli, and M. Altarelli, ``Mn L2,3 edge resonant x-ray scattering in manganites: influence of the magnetic state'', Phys. Rev. B 72, 104108-1/11 (2005).
  70. N. Binggeli, G. Trimarchi, and N. Stojic, ``Ab-initio studies of manganites and related systems'' in Science and Supercomputing at CINECA, Report 2005, pp. 516-520.
  71. S. B. Wilkins, N. Stojic, T. A. W. Beale, N. Binggeli, C. W. M. Castleton, P. Bencock, D. Prabhakaran, A. T. Boothroyd, P. D. Hatton, and M. Altarelli, ``Resonant soft x-ray scattering investigation of orbital and magnetic ordering in La0.5Sr1.5MnO4'', Phys. Rev. B 71, 245102-1/7 (2005).
  72. G. Panaccione, J. Fujii, I. Vobornik, G. Trimarchi, N. Binggeli, A. Goldoni, R. Larciprete, and G. Rossi, ``Local and Long Range Order of Carbon Impurities on Fe(100): analysis of self-organization at a nanometer scale'', Phys. Rev. B 73, 35431-1/9 (2006).
  73. N. Binggeli and M. Altarelli, ``Surface reactivity and quantum-size effects on the electronic density decay length of ultrathin metal films'', Phys. Rev. Lett. 96, 36805-1/4 (2006).
  74. N. Stojic, N. Binggeli, and M. Altarelli, ``Surface magnetism of Rh(001) from LDA+U calculations'', Phys. Rev. B 73, 100405(R)-1/4 (2006).
  75. N. Binggeli and M. Altarelli, ``Quantum-size effects on surface reactivity'' in Elettra Highlights 2005-2006, pp. 98-100 (2006).
  76. S. B. Wilkins, N. Stojic, T. A. W. Beale, N. Binggeli, P. Bencock, S. Stanescu, J. F. Mitchell, P. Abbamonte, P. D. Hatton, and M. Altarelli, ``Separating the causes of orbital ordering in LaSr2Mn2O7 using resonant soft x-ray diffraction'', J. Phys.: Condens. Matter 18, L323-L329 (2006) .
  77. G. Trimarchi and N. Binggeli, ``One-dimensional surface states induced by segregated impurities at transition-metal surfaces '', Phys. Stat. Sol. (b) 243, 2105-2110 (2006).
  78. J. Fujii, G. Panaccione, I. Vobornik, G. Rossi, G. Trimarchi, and N. Binggeli, ``C-Fe chains due to segregated Carbon Impurities on Fe(100)'', Surf. Sci. 600, 3884-3887  (2006).
  79. N. Stojic, N. Binggeli, and M. Altarelli, ``Surface magnetism of Rh(001) from GGA+U calculations'' in Elettra Highlights 2006-2007, pp. 100-101.
  80. N. Stojic and N. Binggeli, ``Phase stability of Fe and Mn within density functional theory plus on-site Coulomb interaction approaches'', J. Magn. Magn. Mater. 320, 100-106 (2008).
  81. G. Trimarchi, I. Leonov, N. Binggeli, Dm. Korotin, and V. I. Anisimov, ``LDA + DMFT implemented with the pseudopotential plane-wave approach'', J. Phys.: Condens. Matter 20, 135227-1/7 (2008).
  82. T. O. Mentes, N. Stojic, N. Binggeli, M. A. Nino, A. Locatelli, L. Aballe, M. Kiskinova, and E. Bauer, ``Strain relaxation in small adsorbate islands: O on W(110)'', Phys. Rev. B 77, 155414-1/9 (2008).
  83. N. Ghaderi, M. Peressi, and N. Binggeli, ``First-Principles Investigations of Intrinsic and Si-doped GaAs Nanowires: Structural Stability and Electronic Properties'', in Frontiers of Fundamental and Computational Physics: 9th International Symposium, AIP Conference Proceedings 1018, 193-196 (2008).
  84. T. O. Mentes, N. Stojic, N. Binggeli, M. A. Nino, A. Locatelli, L. Aballe, M. Kiskinova, and E. Bauer, ``Surface stress determination using low-energy electron diffraction'' in Elettra Highlights 2007-2008, pp. 46-47.
  85. N. Binggeli and M. Altarelli, ``Quantum-size effects in ultrathin Mg films'', Phys. Rev. B 78 035438-1/8 (2008).
  86. Dm. Korotin, A. V. Kozhevnikov, S. L. Skornyakov, I. Leonov, N. Binggeli, V. I. Anisimov, and G. Trimarchi, ``Construction and solution of a Wannier-functions based Hamiltonian in the pseudopotential plane-wave framework for strongly correlated materials'', Eur. Phys. J. B 65, 91-98 (2008).
  87. R. M. Galera, Y. Joly, A. Rogalev, and N. Binggeli, ``Quadrupolar dichroism in rare-earth-zinc compounds'', J. Phys.: Condens. Matter 20, 395217-1/11 (2008).
  88. I. Leonov, N. Binggeli, Dm. Korotin, V. I. Anisimov, N. Stojic, and D. Vollhardt, ``Structural relaxation due to electronic correlations in the paramagnetic insulator KCuF3'', Phys. Rev. Lett. 101, 096405-1/4 (2008).
  89. B. Zheng and N. Binggeli, ``Effects of chemical order and atomic relaxation on the electronic and  magnetic properties of La2/3Sr1/3MnO3'', J. Phys.: Condens. Matter  21, 115602-1/9 (2009).
  90. L. Aballe, A. Barinov, N. Stojic, N. Binggeli, T. O. Mentes, A. Locatelli, and M. Kiskinova, ``The electron density decay length effect on surface reactivity'',  J. Phys.: Condens. Matter 22, 015001-1/9 (2010).
  91. I. Leonov, Dm. Korotin, N. Binggeli, V. I. Anisimov, and D. Vollhardt,  ``Computation of correlation-induced atomic displacements and structural transformations in paramagnetic KCuF3 and LaMnO3'' Phys. Rev.  B 81, 075109-1/11 (2010).
  92. N. Stojic, T. O. Mentes, N. Binggeli, M. A. Nino, A. Locatelli, and E. Bauer, ``Temperature dependence of surface stress across an order-disorder transition: p(1x2) O/W(110)'', Phys. Rev. B 81, 115437-1/7 (2010).
  93. L. Mouketo, N. Binggeli, and B. M'Passi-Mabiala, ``Magnetism at the V/Gd interface'', J. Phys.: Condens. Matter 22, 186003-1/9 (2010).
  94. N. Ghaderi, M. Peressi, N. Binggeli, and H. Akbarzadeh, ``Structural properties and energetics of intrinsic and Si-doped  GaAs Nanowires'', Phys. Rev. B 81, 155311-1/9 (2010).
  95. B. Zheng and N. Binggeli,  ``Influence of the interface atomic structure on the magnetic and electronic properties of  La2/3Sr1/3MnO3/SrTiO3(001) heterojunctions'', Phys. Rev. B 82, 245311-1/13 (2010).
  96. T. O. Mentes, N. Stojic, A. Locatelli, L. Aballe, N. Binggeli, M. A. Nino, M. Kiskinova, and E. Bauer, `` Stress engineering at the nanometer scale: Two-component adlayer stripes'', Europhys. Lett. 94, 38003-1/6 (2011).
  97. L. Mouketo, N. Binggeli, and B. M'Passi-Mabiala, ``Quantum size effects on chemisorption properties: CO on Cu ultrathin films from first principles'', Phys. Rev. B 84, 205452-1/8 (2011).
  98. N. Stojic and N. Binggeli, ``Surface stress of Ni adlayers on W(110): the critical role of the surface  atomic structure'', J. Phys.: Condens. Matter  24, 135001-1/8 (2012).
  99. R. F. Neumann, M. Bahiana, and N. Binggeli, ``Magnetic properties of La0.67Sr0.33MnO3/BiFeO3(001) heterojunctions: Chemically abrupt vs. atomic intermixed interface'', EPL 100, 67002-1/6 (2012).
  100. C. Wang, N. Stojic, and N. Binggeli, ``Optimal interface doping at La2/3Sr1/3MnO3/SrTiO3(001) heterojunctions for spintronic applications'', Appl. Phys. Lett. 102, 152414-1/4 (2013).
  101. A. Locatelli, C. Wang, C. Africh, N. Stojic, T. O. Mentes, G. Comelli, and N. Binggeli, ``Temperature-driven reversible rippling and bonding of a graphene superlattice'',  ACS Nano 7, 6955-6963 (2013).
  102. N. Stojic, T. O. Mentes, and N. Binggeli, ``Self organization in Pd/W(110): interplay between surface structure and stress'', J. Phys.: Condens. Matter 25, 355010-1/12 (2013). 
  103. A. Locatelli, C. Wang, C. Africh, N. Stojic, T. O. Mentes, G. Comelli, and N. Binggeli, ``Rippling and bonding of a graphene superlattice on Ir(100)'' in Elettra Highlights 2012-2013, pp. 68-69.
  104. C. Wang, N. Stojic, and N. Binggeli, ``Spin-polarization properties and electronic structure of the ordered c(2x2) MnCu/Cu(110) surface alloy'', J. Phys.: Condens. Matter 26, 395004-1/11 (2014).
  105. M. Imam, N. Stojic, and N. Binggeli, ``First-principles investigation of a rippled graphene phase on Ir(001): the close link between periodicity, stability, and binding'', J. Phys. Chem. C, 118, 9514-9523 (2014).
  106. B.R. Malonda-Boungou, N. Stojic, N. Binggeli, and B. M'Passi-Mabiala,``Exchange coupling and noncollinear magnetic states in Ni/Fen/Ni(100) multilayers'', Superlatt. Microstruc. 77, 108-123 (2015).
  107. G. Zamborlini, M. Imam, L. L. Patera, T. O. Mentes, N. Stojic, C. Africh, A. Sala, N. Binggeli, G. Comelli, and A. Locatelli, ``Nanobubbles at GPa Pressure under Graphene'', Nano Lett. 15, 6162-6169 (2015). 

Nadia Binggeli     2015-09-10